Increasing Demand for DRAM Module and Component Market throught the Forecast Period

The global DRAM module and components market was valued at USD 94.9 billion in 2021 and is expected to reach USD 110.7 billion by 2027, at a CAGR of 1.2% during the forecast period from 2022 to 2027.

The key factors driving the growth of the DRAM module and components market include emergence of 5G technology, growth in demand for DRAM module and components in automotive sector, growth in adoption of high-end smartphones, and others.

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Opportunity: Increasing adoption of Internet of Things devices

Internet of Things (IoT) allows physical and virtual objects to connect through cloud technology and exchange data and information. IoT is not just a network of internet-connected things but is a network of machines and humans. IoT refers to the ever-growing network of physical objects and the communication that occurs between these objects and other internet-enabled devices and systems.

IoT ecosystem is growing fast owing to the availability of various smart products for domestic and industrial applications. The application areas of IoT include smart homes, smart grids, industrial internet, and connected cars, among many others. As the IoT modules used in various applications become compact, the demand for incorporating more memory in IoT devices increases. DRAMs are small, making them the best option for low-power, high-density applications for the smaller design of IoT solutions. This has resulted in the high demand for DRAMs from various IoT applications.

Challenge: Highly volative pricing nature of DRAM module and components

DRAM makers are pushing into the next phase of scaling but are facing several challenges as the memory technology approaches its physical limit. DRAM is used for main memory in systems, and the most advanced devices used today are based on roughly 18nm to 15nm processes. The physical limit for DRAM is somewhere about 10nm. There are efforts in R&D to extend the technology and ultimately displace it with new memory types, but so far, there is no direct replacement. Until a new solution is in place, the vendors will continue to scale the DRAM and eke out more performance, though in incremental steps at the current 1nm node regime. And at future nodes, some DRAM makers will make a big transition from traditional lithography to extreme ultraviolet (EUV) lithography for production in the fab.