Monday, June 10, 2019

Gallium Nitride Semiconductor Device Market - New Innovations and Technology Advancement by 2023



[179 Pages Report] The gallium nitride semiconductor device market is expected to reach USD 22.47 Billion by 2023 from USD 16.50 Billion in 2016, at a CAGR of 4.6% during the forecast period.

The major factors driving the growth of the gallium nitride semiconductor device market include the vast addressable market for gallium nitride in consumer electronics and automotive, wide bandgap property of gallium nitride material encouraging innovative applications, success of gallium nitride in RF power electronics, and increasing adoption of gallium nitride RF semiconductor device in military, defense, and aerospace application.

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The global gallium nitride semiconductor device market for opto-semiconductor device type held the largest market share in 2016. This is attributed to its wide application in consumer and enterprise, industrial, and automotive industry. Gallium nitride light-emitting diodes (LEDs) are widely used in laptop and notebook display, mobile display, projectors, televisions and monitor, signs and large displays, etc. Gallium nitride LEDs are also used for the interior and exterior lighting in the automotive industry such as headlights and signal lights, car interior lighting, fog lights, stop lights, and dome lights, etc.

The market for gallium nitride-based power drives is expected to grow significantly during the forecast period owing to its ability to minimize power loss and achieve high-speed switching with characteristics such as miniaturization, high breakdown voltage, and high-speed switching.

APAC is expected to hold the largest share of the gallium nitride semiconductor device market during the forecast period. This is attributed to the increasing demand from LEDs in various industries such as consumer and enterprise, industrial, and automotive. Further, EV charging, and electric vehicle production markets, and increasing renewable energy generation are boosting the market in APAC.

APAC held the largest share of the overall gallium nitride semiconductor device market in 2016 owing to the growing demand for these devices in numerous applications such as industrial, computing, telecommunications, consumer and enterprise, automotive and military, and aerospace & defense in Asian countries such as China, Japan, Taiwan, the Philippines, and India.

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Dominant players in the gallium nitride semiconductor device market include Cree (US), Samsung (South Korea), Infineon (Germany), Qorvo (US), MACOM (US), Microsemi Corporation (US), Analog Devices (US), Mitsubishi Electric (Japan), Efficient Power Conversion (US), GaN Systems (Canada), Exagan (France), VisIC Technologies (Israel), Integra Technologies (US), Transphorm (US), Navitas Semiconductor (US), Nichia (Japan), Panasonic (Japan), Texas Instruments (US), Ampleon (Netherlands), Sumitomo Electric (Japan), Northrop Grumman Corporation (US), Dialog Semiconductor (UK), Epistar (Taiwan).

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